Pb（Hf0．3 Ti0．7）O3铁电薄膜的制备与性能研究∗

摘要

The Pb(Hf0.3 Ti0.7 )O3 (PHT)ferroelectric thin films were fabricated by pulsed laser deposition at dif-ferent growth temperatures.The microstructures and ferroelectric properties of the PHT thin films were char-acterized with X-ray diffraction,atomic force microscope,RT66A ferroelectric tester and HP4155C semicon-ductor parameter analyzer.The PHT thin films growth at 400 ℃ had good (111)preferred orientation.The fer-roelectric test of the PHT films deposited at 400 ℃ demonstrated that the remnant polarization was 53.1μC/cm2 ,the coercive field was 390 kV/cm,and remnant polarization was kept at the value of 85% after 1.5 × 109 rollover.The dielectric measurement showed that the dielectric constant of the PHT films growth at 400 ℃ was 540.With the well-behaved properties,the PHT ferroelectric thin films is expected to be applied to ferroelectric random access memory (FeRAM).%采用脉冲激光沉积方法在不同温度下生长Pb(Hf0．3 Ti0．7)O3(PHT)铁电薄膜,利用各种表征手段测试并分析薄膜的微观结构和电性能.研究表明,生长温度为400℃沉积的PHT薄膜具有良好的(111)择优取向；PHT 薄膜矫顽场(2Ec)为390 kV/cm,剩余极化强度(2Pr)为53．1μC/cm2,经1．5×109次翻转后剩余极化强度保持85％；PHT 薄膜绝缘性能良好,相对介电常数约为540.PHT 薄膜有望应用于铁电随机存储器.