基于增透膜的非晶硅薄膜激光低损伤晶化工艺研究

摘要

研究了一种非晶硅薄膜的激光低损伤晶化工艺方法，通过在非晶硅薄膜上淀积氮化硅薄膜方法研究激光退火改善非晶硅薄膜的质量。实验结果表明，随着激光退火频率的增加，有无增透膜样品的衍射强度均会出现先下降后上升再下降的现象。增透膜样品的最强衍射峰出现在10~15 Hz 激光退火后，而无增透膜样品的最强衍射峰则出现在20 Hz 激光退火后。SEM分析表明，应用增透膜可以降低非晶硅薄膜的激光退火脉冲频率，并减少非晶硅薄膜激光损伤，可作为一种低损伤的激光晶化工艺。%Using Si3 N4 thin film as the antireflective layer low damage laser annealing process on amorphous sili-con thin films was studied.XRD results showed that the diffraction intensity of amorphous silicon thin film with an antireflective film increased first,then decreased with the increase of laser frequency.The antireflective samples showed the highest diffraction peaks as annealing by the laser with frequencies from 10 to 15 Hz.For amorphous samples,the highest diffraction peaks appeared when annealing by the laser of 20 Hz.SEM results showed the reflective thin film could efficiently decrease the frequency of annealing laser frequencies,and the corresponding damage in the amorphous silicon thin films was reduced.It was confirmed that the annealing process with the antireflective thin film was an effective crystallization techniques with low laser damage on amorphous silicon films.