Crystallization of Amorphous Silicon Films by Nd:YAG Laser Heating.

摘要

We have converted amorphous Si films into crystalline Si by heating with focused Nd:YAG laser radiation. The films were scanned by a focused laser beam and then studied by reflection electron microscopy and x-ray diffraction. These studies indicate that crystalline sizes as large as 25 micrometers were produced and suggest that a crystalline technique using a scanned laser beam focused to a slit image could be useful in preparing large-grain Si films for photovoltaic cells. (Author)