METHOD FOR CRYSTALLIZING AMORPHOUS SILICON AND THE METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING THE SAME, CAPABLE OF MINIMIZING DAMAGE TO A SUBSTRATE

摘要

PURPOSE: A method for crystallizing amorphous silicon and the method for manufacturing a thin film transistor using the same are provided to crystallize a silicon thin film through local heat using thermite.;CONSTITUTION: An amorphous silicon layer is formed on a substrate(10). A dielectric layer(31) is formed on the amorphous silicon layer. A metal layer(33) is formed on the dielectric layer. A thermite is formed on the metal layer. The amorphous silicon layer is crystallized by reacting with the thermite by heating the substrate.;COPYRIGHT KIPO 2010