电子束蒸发制备织构状纳米 ZnO∶Al 及其光电性能研究

摘要

400 nm thick nano-textured ZnO∶Al thin films have been directly grown on a glass substrate at dif-ferent temperatures ranging from 350 to 400 ℃ by using electron beam vapor deposition apparatus and have no post-annealing process.The effects of various substrate temperatures on the structure,electrical properties and optical properties of ZnO∶Al films were investigated.It is found that the optical transmission was over 87% in all the region of 390 to 1 100 nm and over 93% in the region of 580 to 1 100 nm,and the lowest resistivity of 1.2×10 -4 Ω•cm is obtained for ZnO∶Al film deposited at 380 ℃.%采用真空电子束蒸发沉积设备在不同温度下(350~400℃)直接在玻璃基底上一次性生长400 nm厚的织构状纳米掺铝 ZnO 薄膜。研究了不同的基底温度对掺铝 ZnO 薄膜的结构、电学性质以及光学性质的影响。研究发现，其光学透过率在390~1100 nm的整个波段都超过87％，在580~1100 nm光谱范围内光学透过率超过93％。当沉积温度为380℃时，掺铝 ZnO 薄膜的电阻率最低，其值可达1．2×10－4Ω•cm。