溅射氩气压对射频磁控溅射制备 ZnO∶Al 薄膜性能的影响

摘要

采用磁控溅射方法在玻璃衬底上使用掺杂3％(质量分数)Al2 O 3的 ZnO 陶瓷靶材制备出了掺铝氧化锌(ZnO ∶ Al,AZO)透明导电薄膜.分别用XRD、SEM、四探针测试仪、紫外-可见分光光度计对薄膜的性能进行了表征和分析.研究了溅射过程中不同氩气压强(0．3~1．2 Pa)对薄膜结构、形貌及光电性能的影响.XRD 测试结果表明,所制备的薄膜均具有呈c 轴择优取向的纤锌矿结构.当氩气压强为0．3 Pa时,AZO 薄膜的电阻率最低为6．72×10－4Ω•cm.所有样品在可见光波段的平均透过率超过85％.%Transparent conductive aluminum-doped zinc oxide (AZO)films were deposited on glass substrates by RF magnetron sputtering from ZnO∶3wt% Al2 O 3 ceramic target.The films obtained were characterized and analyzed by XRD,SEM,four-point probes,ultraviolet-visible light spectrophotometer.The dependence of ar-gon gas pressure on the structure,morphology,electrical and optical properties were investigated.The argon sputtering pressure was varied between 0.3 and 1.2 Pa.The XRD analysis indicated that AZO films deposited under various argon gas pressures were a polycrystalline wurtzite structure with a [002]preferred orientation. The lowest resistivity was 6.7×10 -4 Ω•cm (sheet resistance=1 1.2 Ω/□ for a thickness=600 nm)which was obtained at an argon sputtering pressure of 0.3 Pa.The average transmittance was over 85% in the visible range for all samples.