射频前端基准电流源低电压抗电磁干扰设计

摘要

Based on CMOS bulk-driven structure, a low-voltage current reference circuit with high electromagnetic inter-ference (EMI) immunity is proposed, improving the reliability of RF front-end receiver circuit in primary surveillance radar. In the circuit, bulk-driven structure realizes low-voltage supply and sensitive isolation struc-ture improves EMI immunity. The design is implemented in a 0.35μm standard CMOS process using 1V power supply. Theoretical analysis and simulation results for EMI robustness are presented and compared with the clas-sical bulk-driven structure. Results show that the current shift of the proposed design is less than 0.3μA when a 3 times of EMI referred to the reference current is presented in the input.%基于CMOS体驱动,提出低电压基准电流源电路抗干扰设计,提高航管一次雷达射频前端接收电路的可靠性.电路采用体驱动技术实现低电源电压工作,采用敏感隔离结构提高电流镜电路抗干扰性能.设计采用电源电压为1 V的0.35μm标准CMOS工艺,对该基准电流源电路的抗电磁干扰特性进行理论分析与仿真验证,并同普通体驱动结构相比较.实验结果表明:当输入端存在3倍于参考电流大小的电磁干扰时,该结构的电流偏移小于0.3μA.