高纯钽板中晶粒生长的取向相关性研究

摘要

钽溅射靶材主要用于集成电路中导线的扩散阻挡层，其溅射性能受微观组织影响较大。本文采用电子背散射衍射( EBSD)技术，结合Extend Cahn-Hagel模型对周向轧制钽板的再结晶行为进行分析。并侧重于钽板再结晶初、中期与取向相关的晶粒生长速率的研究。结果表明，{111}‹uvw›(‹111›//ND)晶粒具有生长优势，初始阶段生长速率约为同期{001}‹uvw›(‹100›//ND)晶粒的1�6倍。%Tantalum is commonly used for sputtering target and the sputtering performance is highly dependent on its annealed structure. In this paper, the orientation-dependent grain growths at the early and metaphase recrystallization stages were revealed via the electron backscatter diffraction combined with Extend Cahn-Hagel model. The results show that the growth rate for {111}‹uvw›(‹111›//ND) grains is about 1�6 times faster than that for {001}‹uvw›(‹100›//ND) grains.