本征微晶硅薄膜的激活能特性研究

摘要

利用激活能测试装置测量了VHF-PECVD高速沉积的本征微晶硅薄膜的激活能，结果表明，在不同沉积条件下制备的本征微晶硅薄膜的晶化处于非晶一微晶相变域附近，激活能都偏低，存在氧污染问题．给出了氧污染解决途径．%The activation energy of intrinsic microcrystalline silicon thin film,which is deposited very fast by VHF - PECVD,were measured by activation energy testing equipment. The results showed that the intrinsic microcrystalline silicon thin film deposited on different conditions,and the crystalline vol- ume was in amorphous/microcrystalline transition zone, all activation energy on the low side. The prob- lem exists which films are contaminated by oxygen. We discuss some solutions to oxygen contamination.