一种MCT离子注入工艺的模型及其计算机模拟方法

摘要

This paper presented a simply but effective ion implantation modeling for simulating junction formation of MCT, researched digital computer simulation method of this model, and discussed how to define some important parameters.%给出了一种简单而有效的碲镉汞(MCT)离子注入工艺模型，研究了应用该模型进行计算机模拟的数值方法，最后讨论了该模型中一些重要参数的确定方法。