基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系

摘要

Formula and curve of hall voltage and carrier concentration p are derived from hall coefficient formula of two kinds of carrier conduction system . Relations between hall voltage and conduction type of the material for a series of p values are analysed. The range of the hole concentration are defined, which is adapted to hall coefficient formula of single carrier conduction system or two kinds of carrier conduction system.%　　利用二种载流子体系的霍尔系数公式导出该体系下霍尔电压与二种载流子浓度 p 之间的公式及曲线。分析了不同 p 值时霍尔电压值与材料导电类型的关系，确定了适合采用一种载流子体系材料及二种载流子体系材料霍尔系数公式的空穴浓度范围。