In order to research the stress change in Sapphire substrate in vacuum system,two different structures of the heaters and the heating technological parameters were analyzed through simulation of the temperature and stress fields by means of finite element method with ANSYS Workbench.By choosing the heater including loopy spiral tungsten and crucible with paraboloid inner bottom and changing the current value,the temperature difference was reduced from 41.13℃ to 2.33℃ and the stress difference within whole area in Sapphire substrate with diameter of 40ram and thickness of 2ram decreased by 26.1％ from 2.11 MPa to 1.56 MPa.The results indicate that the high uniformity temperature field could be obtained by using the heater including loopy spiral tungsten and crucible with paraboloid inner bottom and the stress distribution in whole area of heated Sapphire was even when current value was 12A.The result was proved by test result of stress of substrates.The result is helpful to stress analysis in other heated materials in vacuum system such as GaAs、InGaAs、GaN、Si、quartz glass etc.%为了研究真空系统中被加热的蓝宝石衬底应力的变化,利用有限元分析方法,借助ANSYSWorkbench软件仿真了温度场以及应力场,对两种不同结构的加热器及加热工艺参数进行了分析.用多圈钨丝螺旋结构外加抛物面釜的加热器,并改变工作电流,将200℃下温度差异由41.13℃降低至2.33℃,使厚度为2mm、直径40mm的蓝宝石衬底整个圆面内的应力差异由2.11MPa减小为1.56 MPa,应力差异减小了26.1％.结果表明,采用多圈钨丝螺旋结构外加抛物面釜可获得高均匀性的加热器温度场,且当工作电流为12A时,加热的蓝宝石衬底整个表面应力分布均匀.并采用蓝宝石衬底的应力检测结果进行了验证.研究结果对真空系统中被加热的其它材料如GaAs、InGaAs、GaN、Si、石英玻璃等应力分析研究具有一定的借鉴意义.
展开▼
