X射线在重金属-二氧化硅界面的剂量增强的模拟计算

摘要

当X射线射入不同材料组成的界面时，在低牂材料的一侧将产生剂量增强。介绍了界面剂量增强效应的基本原理，并用MCNP蒙特-卡罗程序计算了钨-二氧化硅、钽-二氧化硅界面的剂量增强因子。计算结果表明在X射线能量为100～150keV时，界面附近二氧化硅一侧存在较大的剂量增强。%The dose would be enhanced in low Z material when X-ray entersthe interface which is constructed with different materials. The mechanic of dose enhancement is introduced in this article, and the dose enhancement factors of W-SiO2、Ta-SiO2 interface are calculated in the article. The calcuated results demonstrate that there exits stronger dose-enhancement in the SiO2 side near the interface when the energy of X-ray is between 100keV and 150keV.