X射线在重金属-硅界面的rn剂量增强系数的计算

摘要

The dose is enhanced in low Z material when X-ray enters the interface which is constructed with different materials. The mechanic of dose enhancement is introduced in this article, and the dose enhancement factor of W-Si, Ta-Si interface are calculated.%当X射线射入不同材料组成的界面时,在低Z材料的一侧将产生剂量增强。介绍了界面剂量增强效应的基本原理,并用MCNP Monte-Carlo程序计算了钨-硅、钽-硅界面的剂量增强系数。