基于多等级动态栅电阻的IGBT过电压抑制策略

摘要

为了抑制大功率绝缘栅双极晶体管（IGBT）模块在短路情况下的硬关断所产生的过高尖峰电压，提出了一种基于多等级动态栅电阻的软关断策略，并给出了该策略的具体实现方法。通过3300V/1200A IGBT模块的短路实验证明了此策略可以使驱动器更早地采取保护措施，限制的短路电流和短路功耗，减小了关断尖峰电压，达到了设计要求。%In order to suppress the high voltage spikes caused by hard turn-off under short-circuit conditions of high-power insulated gate bipolar transistor (IGBT) module, the new strategy of soft turn-off based on multi-level dynamic gate resistances is proposed in this paper and the specific implementation is proposed. The short-circuit experimental results based on 3300V/1200A IGBT module proves that the strategy proposed enables the driver to take protective measures earlier and brings limited short?circuit current, smaller short circuit power consumption and lower spike voltage. It achieves the design requirement.