基于非等温能量平衡模型的GTR二次击穿特性研究

摘要

基于非等温能量平衡传输模型，利用Silvaco-TCAD全面系统地分析了发射区半宽度(LE)、发射区边缘刻蚀结构以及浮空发射区结构对NPN型硅大功率晶体管(GTR)直流正偏二次击穿特性的影响。结果表明：当LE为130μm时，GTR直流正偏二次击穿临界点电压(VSB)最高。对于LE为150μm的GTR，当发射区边缘横向刻蚀距离为10μm时，对直流正偏二次击穿的改善效果最好。当浮空发射区与发射区边缘间距减小到17μm时，浮空发射区开始发挥改善直流正偏二次击穿特性的作用。%Based on non-isothermal energy balance transfer model, the influences of emitter half-width (LE), edge-emitter’s etched structures and floating-emitter structure on the high-power silicon NPN transistor (GTR) DC forward biased secondary breakdown were studied comprehensively and systematically by using Silvaco-TCAD. The results show that When LE is 130μm, GTRforward DC biased voltage secondary breakdown critical point (VSB) is the highest. When the lateral etching distance of the emitter edge is 10μm,LE of 150μm in GTR can improve the DC biased secondary breakdown the best. When floating emitter and the emitter edge spacing is reduced to 17μm, the floating emitteris beginning to improve the DC forward biased characteristics of second breakdown.