Vapor transport deposition of Sb_(2)Se_(3)thin films for photodetector application

摘要

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices.In this work,the vapor transport deposition(VTD)method is employed to prepare Sb_(2)Se_(3)films on substrates.The influence of deposition temperature,distance between the Sb_(2)Se_(3)sources and substrate,and the deposition holding time on the film morphology is investigated in detail.The deposited Sb_(2)Se_(3)thin film is employed to fabricate photodetector with a structure of ITO/SnO_(2)/Sb_(2)Se_(3)/Au,where the spin-coated SnO_(2)film is used as the buffer layer.The device demonstrates relative high responsivity in the range of 300-1000 nm with a maximum value of 312mAW^(-1)at 750 nm.