首页> 中文期刊> 《中国科学》 >Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

Study of ion implanted Al0.25Ga0.75As/GaAs by Raman spectroscopy

         

摘要

[1]Ramam, A., Chua, S. J., Luminescence anomaly in band gap tailored In0.35(GaxAl1-x)0.47As quaternary alloy growth by molecular beam epitaxy, J. Cryst. Growth, 1997, 175: 1294.[2]Xu, X. G., Huang, B. B., Ren, H. W. et al., Study on the stability of GaAs/AlGaAs superlattice structure, Acta Physica Sinica (Overseas Edition), 1995, 4: 47.[3]Yoon, S. F., Miao, Y. B., Radhakrishnan, K., Some characteristic of silicon-doped In0.52Al0.48As grown lattice-matched on InP substrates by molecular beam epitaxy, Thin. Solid Films, 1996, 287: 284.[4]Nakamura, K., Fuyuki, T., Matsunami, H., Strain in GaP films heteroepitaxially grown in Si by Metalorganic Chemical Vapor Deposition, Jan. J. Appl. Phys., 1998, 37: 4231.[5]Sadao Adachi, GaAs, AlAs, and AlxGa1-xAs: Material parameters for use in research and device applications, J. Appl. Phys., 1985, 58: R1.[6]Attolini, G., Francesio, L., Franzosi, P. et al., Raman scattering study of residual strain in GaAs/InP heterostructures, J. Appl. Phys., 1994, 75: 4156.[7]Helmy, A. S., Bryce, A. C., Ironside, C. N. et al., Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures, Appl. Phys. Lett., 1999, 74: 3978.[8]Jencic, I., Bench, M. W., Robertson, I. M. et al., A comparison of the amorphization induced in AlxGa1-xAs and GaAs by heavy-ion irradiation, J. Appl. Phys., 1991, 69: 1287.[9]Wickboldt, P., Anastassakis, E., Sauer, R. et al., Raman phonon piezospectroscopy in GaAs: Infrared measurements, Phys. Rev. B, 1987, 35: 1362.[10]Leng, J., Qian, Y., Chen, P. et al., Disorder activated optical modes and the phonon dispersion of AlxGa1-xAs lattice vibration, Solid State Commun., 1989, 69: 311.[11]Wagner, A., Koidl, P., Newman, P. G., Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors, Appl. Phys. Lett., 1991, 59: 1729.[12]Masayuki Sugiura, Masato Kishi, Takashi Katoda, In situ observation of the strain in GaP on Si during cooling step after growth by Raman spectroscopy, J. Appl. Phys., 1995, 77(8): 4009.[13]Gennari, S., Attolini, G., Pelosi, C. et al., Raman scattering study and AFM morphological characterization of MOVPE-grown (111)-strained heterostructures, J. Cryst. Growth, 1996, 166: 309.[14]Tsutornu Lida, Yunosuke Makita, Shinji Kimura et al., Ion-beam doping of GaAs with low-energy (100 eV) C+ using combined ion-beam and molecular-beam epitaxy, J. Appl. Phys., 1995, 77: 146.

著录项

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号