高峰值功率808 nm 垂直腔面发射激光器列阵

摘要

In order to achieve high output power of 808 nm vertical cavity surface emitting laser (VCSEL) array, the DBR material of 808 nm VCSEL was optimized, and Al content of Alx Ga1 - x As was analyzed for the influence on refractive index and absorption. Based on the above analysis, 2 × 2 VCSEL array was designed and fabricated with non-closed ring structure. The peak power of the VCSEL array was tested under waveform analysis method. The peak power is 30 W in 60 ns pulse width and 100 Hz repetition rate, and 9 W in 20 ns pulse width and 100 Hz repetition rate, respec-tively. The near-field and far-field of VCSEL array were also measured. The beam divergences with full-width at half maximum are 16. 9° and 17. 6° in the vertical and lateral directions, respectively.%为了实现808 nm 垂直腔面发射激光器(VCSEL)的高功率输出，对808 nm VCSEL 的分布式布拉格反射镜(DBR)结构材料进行了优化设计，分析了 Alx Ga1- x As 材料中 Al 组分对于折射率与吸收的影响，并最终确定了材料。采用非闭合环结构制备了2×2 VCSEL 列阵。通过波形分析法对 VCSEL 列阵的功率进行了测量：在脉冲宽度为20 ns、重复频率为100 Hz、注入电流为110 A 的条件下，最大峰值功率为30 W；在脉冲宽度为60 ns、重复频率为100 Hz、注入电流为30 A 的条件下，最大功率为9 W。对列阵的近场和远场进行了测量，激光器垂直发散角和水平发散角半高全宽分别为16.9°和17.6°。