首页> 中文期刊> 《含能材料》 >半导体桥对含能材料的点火特性研究

半导体桥对含能材料的点火特性研究

         

摘要

在10 μF钽电容放电激励下,对两种阻值相当质量不同的半导体桥(SCB)和细化的发火药剂斯蒂芬酸铅(LTNR)和叠氮化铅(PbN6)所组成的发火件进行了实验研究,根据发火件的电特性变化和发火现象发现半导体桥存在电热发火、电爆发火和等离子体发火三种情况,测试了SCB/LTNR和SCB/PbN6发火件的50%发火电压和发火时间.结果表明半导体桥的发火电压阈值不仅与发火药剂有关,还与半导体桥换能元有关,所以半导体桥的设计存在最佳质量,通过对比得知LTNR比PbN6感度高,PbN6比LTNR的燃速高.%Capacitive discharge SCB initiation of energetic materials was discussed at different firing voltage levels. Both of SCB are the same resistance and difference mass. The energetic materials are LTNR and PbN6. For the SCB device, there are three modes of igniting energetic materials, electrothermal ignition, electrical explosive ignition and plasma ignition, respectively. To understand further the behavior of SCB ignition, we measured the critical ignition voltage and ignition time of SCB/LTNR and SCB/PbN6 device. As a result the critical ignition energy is not only related with energetic materials, but also the comparable mass of the SCB bridge, so there is an optimal design mass about SCB bridge. Besides, the LTNR was more sensitive than PbN6, however, the burning rate of PbN6 is higher than that of LTNR.

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