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Firing and Initiation Characteristics of Energetic Semiconductor Bridge Integrated with Varied Thickness of Al/MoO3 Nanofilms

机译:含Al / MoO3纳米膜厚度变化的高能半导体桥的点火和起爆特性

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Two types of energetic semiconductor bridges (ESCBs), with 3μm and 6μm Al/MoO3 energetic multilayer nanofilms integrated respectively, were prepared with microfabrication technique. The influence of Al/MoO3 nanofilms thickness on the firing and initiation characteristics of ESCBs was investigated. Results show that critical firing time and critical firing energy of ESCBs do not change significantly. The flame size of SCB-Al/MoO3(6μm) is twice than that of SCB-Al/MoO3(3μm) at 100μs. Furthermore, the firing duration of SCB-Al/MoO3(6μm) is 540μs, much higher than SCB-Al/MoO3(3μm) 300μs, which is very useful for the initiation of energetic materials. However, the contact and non-contact initiation of ESCBs on HMX-Al/MoO3 composite explosives show that the film thickness of Al/MoO3 has the remarkable influence on the initiation ability of ESCBs. The results from experiments deepen the understanding of the influence of thickness of Al/MoO3 nanofilms on the firing performance of SCB, which is very meaningful for the initiation of energetic materials.
机译:采用微细加工技术制备了分别集成了3μm和6μm的Al / MoO3高能多层纳米膜的两种高能半导体桥(ESCB)。研究了Al / MoO3纳米膜厚度对ESCBs焙烧和引发特性的影响。结果表明,ESCB的临界点火时间和临界点火能量没有明显变化。在100μs时,SCB-Al / MoO3(6μm)的火焰大小是SCB-Al / MoO3(3μm)的两倍。此外,SCB-Al / MoO3(6μm)的发射持续时间为540μs,远高于SCB-Al / MoO3(3μm)300μs的发射时间,这对于引发高能材料非常有用。然而,ESCBs在HMX-Al / MoO3复合炸药上的接触和非接触引发表明,Al / MoO3的膜厚对ESCBs的引发能力有显着影响。实验结果加深了对Al / MoO3纳米膜厚度对SC​​B烧成性能影响的理解,这对于引发高能材料非常有意义。

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