不同调制比的Al/MoO3含能半导体桥电爆特性研究

摘要

The modulation ratio is an important parameter reflecting the stoichiometric ratio of materials in the preparation of films, which directly affects the reaction performance of the composite films. Three kinds of Al/MoO3energetic semi-conductor bridge (ESCB) with various modulation ratios were prepared by magnetron sputtering, in order to explore the optimal modulation ratio of Al/MoO3reactive multilayer films on semi-conductor bridge. The morphology and thermal reaction properties of the films were characterized, and the electro-explosive process of Al/MoO3-ESCBs under different charging voltage was recorded. The results show that the adjusting modulation ratio of ESCBs can reduce its critical energy consumption, shorten the critical excitation time and extend the combustion time.%调制比是薄膜制备中体现材料化学计量比的重要参数,直接影响含能复合薄膜的反应性能.为了研究Al/MoO3含能复合薄膜在半导体桥上复合的最佳调制比,采用磁控溅射工艺分别制备了3种调制比的Al/MoO3含能复合薄膜和Al/MoO3含能半导体桥.研究了薄膜的形貌、热反应性能与Al/MoO3含能半导体桥在不同充电电压下的电爆过程.结果表明适当调整调制比可以减小临界激发能量,缩短临界激发时间,提高含能半导体桥的燃烧时间.