火工品用复合半导体桥技术的研究与发展

摘要

具有低发火能量、高瞬发度、高安全性以及比多晶硅半导体桥更高的能量输出优异性能的复合半导体桥(ScB)点火起爆装置(EED),是一类采用现代微电子工艺,由反应材料与半导体桥相结合的新型点火产品.从理论、结构、性能不同角度,综述了复合半导体桥EED的研究进展与优缺点.为增大SCB点火性能提供可行的依据和参考,对比分析了多层复合膜点火桥的结构特点、反应材料、发火条件、输出性能.认为多层复合SCB是多晶硅半导体桥的理想改进产品,具有更广泛的应用范围和前景.%The composite semiconductor bridge (SCB) electrical-explosive device (EED) with excellent performances of low ignition energy,short ignition time,high security and high energy output in comparison with polycrystalline silicon semiconductor bridge,is a new type ignition product obtained by a reactive materials-semiconductor bridge combination,using a modern microelectronic technology.The research progress,advantages and weaknesses of the composite semiconductor bridge EED were reviewed.In order to increase the ignition energy of SCB to provide a viable basis and reference,the structure features,reactive materials,ignition conditions and output performance of the multi-layer composite film ignition bridge were comparatively analyzed.Considering that the multi-layer composite semiconductor bridge EED is ideal improvement products of polycrystalline silicon SCB,having a wider range of application and prospects.