Development of Laser Spectroscopic Diagnostics to Support Advanced Compound Semiconductor Deposition Techniques.

摘要

This program constructed and demonstrated an apparatus for the development of laser diagnostics for the gas phase molecules involved in semiconductor fabrication techniques, particularly the organometallic chemical vapor deposition of compound semiconductors like gallium arsenide. Work in this apparatus, a flow tube with mirrors for long path tunable infrared diode laser absorption and electrodes for a radio frequency glow discharge, culminated in observations designed to assess the importance of arsenic hydride radicals in the decomposition of organoarsenic compounds. Preliminary observations of fluorocarbon and methane plasmas produced observations of several species which could be compared with models and other observations and which added to knowledge of these systems with their important applications in silicon etching an diamond deposition. The program also resulted in band strength measurements for the methyl and difluorocarbene radicals, using tunable diode laser, dye laser, and fast flow reactor techniques. (R.R.H.)