电磁环境中电子器件的失效分析

摘要

以现在应用较广泛的电子器件-MOS器件在电磁环境中的失效建模为例,针对MOS器件受到电磁脉冲和周期脉冲的冲击后,所表现出来的失效特征,得出它符合基于随机过程的退化失效模型所描述的结论.根据结论和两种电应力的特点,分别提出基于随机过程的失效建模和动态应力-强度干涉建模.通过模型的建立和分析,初步制定出电子器件失效的试验方案.%MOSFET failure modeling is taken as an example for this electron device is more and more impor-tant.Aiming at the failure characteristic of MOSFET exposed to impact of electromagnetic pulse and the characteristic under period pulse,a conclusion that this conforms to degradation failure model based on stochastic process iS obtained.According to this conclusion and characteristic of two kinds of electric stres-ses,modeling based on stochastic process and dynamic stress-strength interference modeling are put for-ward and presented respectively.The experimental scheme of electron device failure iS made through estab-lishment and analysis of model.