适用于PDP的透明六硼化镧薄膜性能研究

摘要

采用电子束蒸发方法在商用PDP玻璃衬底和Ta衬底上沉积六硼化镧薄膜.分别对PDP玻璃衬底上沉积的六硼化镧薄膜的可见光范嗣内的透过率、薄膜生长取向和附着力进行了研究;对钽衬底上沉积的六硼化镧薄膜阴极的逸出功进行了研究.结果表明,制备的六硼化镧薄膜厚度为43nm时,在可见光范围内透过率大于90%,优于传统MgO保护层;六硼化镧薄膜具有(100)晶面择优生长的特点,薄膜的品格常数与靶材相差小于0.2‰,薄膜的晶粒细小,成膜致密均匀;制备的透明六硼化铡薄膜的逸出功为2.56 eV.%The lanthanum hexaboride( LaB6 )thin film was deposited on PDP-glass substrate and Ta substrate by the method of electron-beam deposition. The deposition was designed under the substrate temperature of 250 ℃ and the vacuum of 2×l0-4pa. The results pointed out that,the performances of LaB6 thin film grew on PDP-glass substrate were excellent. The deposited LaB6 thin films of 43 nm obtained high transparent ratio and predominantly( 100)oriented growth. The lattice displacement between LaB6 film and the LaB6 target source was less than 0.2 ‰, and the crystal size was relatively small. Theoretically, the LaB6 film obtained the possibility of forming low stress contact on PDP-glass substrates. The work function of LaB6 film cathode was measured to be 2.56 eV. The consequence proved the future usage of LaB6 thin film in neo-PDP devices.