用改进的差分进化算法提取HEMT小信号模型的参数

摘要

高电子迁移率晶体管(HEMT)以其噪声低和频带宽等特点在微波毫米波领域得到了广泛的应用,本文在传统优化方法的基础上,对差分进化算法进行了改进,并基于该算法对HEMT小信号等效电路模型进行了模型参数提取.实验结果表明,2×20 μm GaAs HEMT器件S参数模拟结果和测试结果在40 GHz频率范围内吻合很好,误差在2％以内.%High electron mobility transistor(HEMT) has been widely used in the field of microwave and millimeter wave,because of low noise figure,wide frequency band and so on.An improved differential evolutionary algorithm which based on the traditional optimization methods is present in this paper,and 2×20 μm GaAs HEMT small-signal model parameter is extracted by using this improved method.The developed extraction method is validated by the excellent fit between measured and calculated S-parameters within an error of 2％ up to 40 GHz.