膜去溶进样高分辨ICP-MS测定半导体级硝酸中杂质元素

摘要

Trace metals in semiconductor grade nitric acid were determined by HR-ICP-MS with membrane desolvation. The sample was analyzed directly, and all elements were determined with standard addition. The experimental results indicate that the method is easier and fast and it avoids the pollution of sample. HR-ICP-MS can eliminate multi- molecular ion disruption, reduce detect limit, and improve quantitative accuracy. The detection limits were 0.69-23.73 ng/L, and their recoveries were from 88.2% to 106.0%. All the above show that the method is suitable for rapidly determining trace elements in semiconductor grade hydrofluoric acid, which is simple with credible results.%利用高分辨电感耦合等离子体质谱测定半导体级高纯硝酸中的痕量金属杂质,用膜去溶进样系统直接进样,用标准加入法进行上机检测,无需前处理,快速,避免了在样品前处理时的污染问题.高分辨电感耦合等离子体质谱可以消除多分子离子干扰,降低检出限,提高定量准确性.方法的检出限为0.69～23.73 ng/L,加标回收率为88.2％～106.0％,方法简单,结果可靠,适用于高纯硝酸中痕量元素的快速测定.