辉光放电质谱法检测AZO靶材中痕量元素及深度分布

摘要

In this paper, glow discharge mass spectrometry (GDMS) is used for the analysis of major and trace elements in alumina-doped zinc oxide (AZO) target and its depth profiling. First of all, the polyatomic ion interference of elements in AZO sample and Ar, H, O, N and other gas elements are thoroughly examined. Then, making an in-depth profile analysis of AZO target surface after magnetron sputtering by GDMS and step profiler, on which the longitudinal distribution of major pollution elements is also examined. Lastly, making mass spectrographic analysis of AZO target impurities after pre-sputtering by GDMS. Results of verification test by X-ray photoelectron spectroscopy (XPS) indicates that Zn and Al contents in the two methods are similar, and that GDMS is an effective method to analyze AZO and other semiconductor targets. Hence, pollution caused by AZO target in the process of sputtering can be effectively predicted and avoided.%利用辉光放电质谱仪(GDMS)对铝掺杂的氧化锌(AZO)靶材中的常微量元素及其深度分布进行分析.首先考察AZO样品中的元素和Ar、H、O、N等气体元素形成的多原子离子干扰.其次利用GDMS和台阶仪对已经进行磁控溅射过的AZO靶材表面进行深度剖析,考察靶材上的主要污染元素随深度的纵向分布,最后利用GDMS对预溅射完后的AZO靶材内部杂质元素进行质谱分析.利用XPS进行验证,两种方法测试得到的Zn和Al的含量相近.分析结果表明GDMS是分析AZO等半导体靶材的有效方法,该方法可以对靶材造成的污染进行预判,避免溅射过程中造成的污染.