CuOx空穴传输层用于钙钛矿太阳能电池

摘要

在氧化铟锡(ITO)玻璃导电基底上,通过电化学沉积制备CuOx薄膜.产物的最高已占轨道(HOMO)能级和最低未占轨道(LUMO)能级分别是-5.31 eV和-3.30 eV,与钙钛矿CH3NH3 PbI3的能级匹配.将产物作为空穴传输层,采用反向平面结构:ITO/CuOx/CH3NH3PbI3/C60/2,9-二甲基-4,7-联苯-1,10-菲罗啉(BCP)/Ag制作钙钛矿太阳能电池,获得最高13.0％的光电转换效率,其中开路电压为0.99 V,短路电流密度为20.2 mA/cm2,填充因子为65％.%The CuOx film on indium tin oxide(ITO) conductive glass substrate was synthesized via electrochemical deposition.The highest occupied molecular(HOMO) and lowest unoccupied molecular(LUMO) energy levels were-5.31 eV and-3.30 eV,respectively,which matched well with those of CH3NH3PbI3 perovskite.It was utilized as hole-transporting layer in perovskite solar cells with device configuration of ITO/CuOx/CH3NH3PbI3/C60/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP)/Ag.The champion photoelectric conversion efficiency of 13.0％ was obtained with open circuit voltage of 0.99 V,short-circuit current density of 20.2 mA/cm2 and fill factor of 65％.