脉冲激光背照射单粒子效应实验研究

摘要

To deal with the increasing metal layers in the front side of integrated circuit,the backside single event effects laser testing method based on the experimental resultsof the unhardened SRAM IL-2 and the hardened SRAM 1020-2 was presented. Theproblems that involved backside laser testing were discussed. The hardened validity wasobtained by comparing the effective energy threshold between both samples.%为避免集成电路正面金属层对激光的阻挡,采用背面照射的方法对非加固SRAM IL-2和加固SRAM 1020-2进行了单粒子效应实验.对脉冲激光背面照射实验的相关问题进行了探讨.比较了两种器件产生单个位翻转的有效激光阈值能量,验证了器件加固措施的有效性.