The traditional reference source has a large power consumption and territory area, therefore, it is inapplicable for the design of the passive tag in the ultrahigh RFID technology. A voltage reference source with low voltage, low power consumption, without operational amplifier and constituted by all-MOS tube was designed, a new all-MOS tube reference core circuit was proposed. The temperature property is excellent. A pre-stabilized voltage circuit was added, the traditional design of operational amplifier was abandoned and the PSRR was increased. Simulation results showed that, at the typical supply voltage of 1.5V, the output of voltage reference was 619mV and the static power consumption was 1.8 μW; at 1.5 V～5 V, the voltage reference changed by 22 μV, the linear regulation rate was 4.9 μV/V; at low frequency, the PSRR was as high as -102 dB; within the scope of -20℃～120℃, the temperature coefficient was 6.2 ppm/℃. The proposed design is especially applicable for the chip of the ultrahigh RFID tag requiring low cost and low power consumption.%为了解决传统基准源功耗和版图面积较大而无法适用于超高频射频识别技术中无源标签的设计,设计一无运放、全MOSFETs(metal oxide field-effect transistor)构成的低压低功耗基准电压源.提出的全MOS结构的基准核心电路,有良好的温度特性;加入了预稳压电路而摒弃传统的运放设计,提高电源抑制比.仿真结果表明,在1.5 V典型供电电压下,输出的基准电压为619 mV,静态功耗为1.8μW;1.5～5 V基准电压变化22μV,线性调整率为4.9μV/V;低频时电源抑制比高达-102 dB;-20～120°的温度系数为6.2×10-6/℃.该设计尤其适用于要求低成本、低功耗的超高频射频识别标签芯片.
展开▼
