GaN纳米棒的催化合成及其发光特性

摘要

使用稀土元素Tb作催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜,成功制备出GaN纳米捧.X射线衍射测试显示,GaN纳米棒具有六方结构.利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出,纳米捧为单晶GaN,纳米捧的直径为50-150 nm,长度约10μm.光致发光谱在368.6 nm处有一强的紫外发光峰,说明纳米棒具有良好的发光特性.讨论了GaN纳米棒的生长机制.%Rare earth metal seed Tb was employed for the growth of GaN nanorods. GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. X-ray diffraction results indicated that the nanorods were hexagonal GaN. Observations using scanning electron microscopy and high-resolution transmission electron microscopy showed that GaN was of single-crystal nanorod structure, with diameter 50-150 nm and length about 10 μm. Photoluminescence spectrum showed a strong UV emission peak at 368.6 nm, indicating that the products possess good luminescent characteristics. The growth mechanism of GaN nanorods was also discussed.