电弧放电法制备大面积高纯单壁碳纳米管薄膜

摘要

介绍了一种制备大而积高纯度单壁碳纳米管(SWCNT)薄膜的新方法.利用改进的电弧放电法,在真空放电室内分别安装两枚石墨极板,使之形成一个球冠型电容器.使用这种新型装置,可以在两枚球冠型石墨极板之间产生一个合适的附加电场和成膜基板,通过控制放电时间,可在阴极的球冠型石墨极板卜制备出厚度从数微米至1毫米不等的SWCNT薄膜.场发射扫描电子显微镜(FESEM)、高分辨透射电子显微镜(HRTEM)、拉曼光谱和热重分析(TGA)的表征结果表明,这个方法可以高效地制备具有高纯度的SWCNT薄膜.%A novel method to synthesize single-walled carbon nanotube (SWCNT) films with large area and high purity was introduced. An arc-discharge facility was improved by adding two graphite plates to the electrodes to form a spherical cap capacitor in the vacuum cavity so that an additional electric field of appropriate intensity could be generated. Using this new facility, single-walled carbon nanotube films of different thicknesses ranging from a few microns to a millimeter (controlled by the discharge time) were synthesized on a spherical cathode graphite plate. The film structures were characterized by field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and thermogravimetric analysis (TGA). Results show that this is an efficient way to produce single-walled carbon nanotube films of high purity.