The n-type Si-rich SiNx film is deposited on a p-type crystalline Si (c-Si) substrate by facing target sputtering technique, and the Si-rich SiN~/c-Si heterojunction device is finally formed. The heterojunction device shows a high rectification ratio (1.3×10^3 at ±2 V) at room temperature. Three distinct regions of temperature-dependence J-V characteristic curve can be identified, where different current density variations are indicated. In the low voltage range the current follows Ohmic behavior. In the intermediate range of voltage the current is governed by tunneling and recombination process, while space-charge-limited current (SCLC), with an exponential distribution of trapping states, dominates the conduction mechanism in the relatively high voltage range.%采用对靶磁控溅射方法在P型晶体硅（c—Si）衬底上沉积n型富硅氮化硅（SiNx）薄膜，形成了富硅SiNx／c—Si异质结．异质结器件呈现出较高的整流比，在室温下当V=4-2V时为1．3×10^3．在正向偏压下温度依赖的J—V特性曲线可以分为三个明显不同的区域．在低偏压区载流子的输运满足欧姆传输机理，在中间偏压区的电流是由载流子的隧穿过程和复合过程共同决定的，在较高偏压区的电输运以具有指数陷阱分布的空间电荷限制电流（SCLC）传输机理为主．
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