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High performance III-nitride heterostructure devices exploiting polarization, isotope physics and integrating with silicon

机译：利用极化，同位素物理学并与硅整合的高性能III型氮化物异质结构器件

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作者
Ganguly, Satyaki;
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作者单位

University of Notre Dame;

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授予单位 University of Notre Dame;
学科
学位 Ph.D.
年度 2014
页码 223 p.
总页数 223
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: Towards monolithic integration of nano-devices [J] . Kanungo P.D., Schmid H., Bj?rk M.T., Nanotechnology . 2013,第22期

机译：纳米管模板中III-V纳米线的选择性区域生长及其在硅上的异质结构：纳米器件的单片集成
2. The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices [J] . Hahn Herwig, Funck Carsten, Geipel Sascha, Electron Devices, IEEE Transactions on . 2016,第2期

机译：再谈III型氮化物双异质结构：MIS设备阈值电压工程的好处
3. Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering [J] . Peart Matthew R., Wierer Jonathan J. Jr. IEEE Transactions on Electron Devices . 2020,第2期

机译：使用偏振工程的III-氮化物垂直功率器件的边缘终端
4. Growth-Microstructure-Device Performance Correlations for III-nitride Optoelectronic and Power Devices on Sapphire and Silicon [C] . Anisha Kalra, Shashwat Rathkanthiwar, Nayana Remesh, IEEE Electron Devices Technology and Manufacturing Conference . 2020

机译：蓝宝石和硅上III型氮化物光电和功率器件的生长-微结构-器件性能相关性
5. Silicon/silicon germanium heterostructures: Materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors. [D] . Chung, Sung-Yong. 2005

机译：硅/硅锗异质结构：材料，物理学，量子功能器件及其与异质结构双极晶体管的集成。
6. Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices [O] . Demetrio Logoteta, Gianluca Fiori, Giuseppe Iannaccone -1

机译：作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
7. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design [O] . Debdeep Jena, John Simon, Albert (kejia Wang, 2011

机译：III族氮化物异质结构中的偏振工程：器件设计的新机会
8. Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices. [R] . Nepal, N., Wheeler, V. D., Anderson, T. J., 2013

机译：用于电子器件的III-氮化物/石墨烯异质结构的外延生长。

High performance III-nitride heterostructure devices exploiting polarization, isotope physics and integrating with silicon

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