HETERGENOUS INTEGRATION AND ELECTRO-OPTIC MODULATION OF III-NITRIDE PHOTONICS ON A SILICON PHOTONIC PLATFORM

摘要

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.