Metal Contacts on Low-Dimensional Materials.

摘要

As the scaling of the microelectronics is reaching nano regime, low-dimensional materials have been of increasing interest for future electronics applications. The low-dimensional materials, such as Si nanowires (SiNWs), carbon nanotubes (CNTs), graphene and transition metal dichalcogenides (TMDs), not only provide small body for further-scaled devices but also bring about new intrinsic properties for application in future optoelectronics, spintronics and so on. However, the small dimensions add significant difficulty for reducing contact resistance in the nanoelectronic devices. This dissertation presents a study of the metal contacts on low-dimensional materials. The focus of this work is on SiNWs and monolayer or few-layer MoS2.;First, the metal contact on SiNW field effect transistors (FETs) was studied with a gate assisted Kelvin structure. In this work, I fabricated ambipolar SiNW FETs with Al contacts. The ambipolar characteristics and the gate assisted Kelvin structure enabled the measurement of the contact properties of both electron and hole flows at the same contact. In this work I found that the contact performance is affected by the carrier type that flows in the channel as well as the current direction. In addition, an inverter was designed and realized on a single SiNW leveraged by the ambipolar FET characteristics.;Then, I have studied metal contacts on MoS2, which is one of typical two-dimensional semiconductors. In the first part of this work, Ag and Ti contacts on exfoliated MoS2 monolayers and few-layers are fabricated, characterized and analyzed. Based on the current-voltage (I-V) measurement, surface morphology and Raman spectroscopic measurement, I found that interface morphology plays an important role on the contact performance in MoS2 FETs. In the second part of this work, gate-assisted contact measurement was carried out on chemical vapor deposited low-dimensional MoS 2 layers. The contact resistance and current crowding have been measured and analyzed at different gate bias. All these findings contribute to the understanding of metal contact on MoS2.;SiNWs and MoS2 are well-representative examples of emerging low-dimensional materials. The gate assisted contact measurement and metrology can also be applied to understand the metal contacts on other emerging low-dimensional materials.