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Integrated Circuit for High SNR Electrical Impedance Tomography

机译:高SNR电阻抗层析成像集成电路

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摘要

Electrical impedance tomography (EIT) is a promising technology for health telemonitoring devices because it is radiation-free, highly specific, affordable, and miniaturizable. Portable EIT imaging is required to have a wide dynamic range, utilize the least amount of power possible, and collect data rapidly while covering a wide frequency range.;In this work, the focus is on the development of the EIT system in two main areas: 1) a procedural design that relates the circuit specification of every individual block to a top-level EIT system requirement, and 2) design and implementation of a wide-bandwidth, fast, high signal-to-noise ratio (SNR), low-power EIT front-end.;In the first part of this research, the EIT chain is studied and equations are derived to formulate the design of each individual block, in order to bridge the gap between EIT system-level specifications and circuit design requirements.;In the second part, two different application-specific integrated circuits (ASICs) for the front-end of the EIT system are designed and implemented, where the second generation addresses the shortcomings of the first generation, as follows:;In the first version, an EIT front-end with a successive-approximation-register (SAR) ADC is developed. The read-out chain comprises a programmable-gain instrumentation amplifier (IA), an analog-to-digital converter (ADC) driver, and a hybrid resistive-capacitive (R-C) SAR ADC. The read-out channel is fabricated in a 0.18 mum CMOS technology. This is the first ASIC front-end for EIT that covers a wide range of frequencies from 100 Hz up to 10 MHz. The chain maintains an SNR between 68 and 56 dB and consumes between 6.9 mW and 21.8 mW based on its operating frequency. In this design, the power consumption of the chain for input frequencies higher than 3.5 kHz is fixed and equal to 21.8 mW.;To further improve the performance of the chain and reduce the power consumption, a fully power-adaptive chain with a dual-DAC hybrid R-C SAR ADC is implemented in a 0.18 mum CMOS technology and constitutes the second version. The chain covers frequencies ranging from 100 Hz up to 10 MHz. The total measured power consumption of the read-out chain ranges from 2.1 mW to 21.7 mW, while maintaining an SNR between 81 and 65 dB. The power consumption of the chain in this design increases with the input frequency in an almost linear fashion, which results in a significant reduction in power expenditure compared to the previous generation.
机译:电阻抗断层扫描(EIT)技术是一种健康的远程监护设备,因为它无辐射,高特异性,价格适中且可小型化,因此是一项很有前途的技术。便携式EIT成像要求具有宽动态范围,使用尽可能少的功率并在覆盖很宽的频率范围的同时快速收集数据;在这项工作中,重点是在两个主要领域开发EIT系统:1)将每个模块的电路规格与顶级EIT系统要求相关联的程序设计,以及2)宽带,快速,高信噪比(SNR),低,功率EIT前端。;在本研究的第一部分中,研究了EIT链,并推导了公式来制定每个独立模块的设计,以弥合EIT系统级规范和电路设计要求之间的差距。在第二部分中,为EIT系统的前端设计和实现了两种不同的专用集成电路(ASIC),其中第二代解决了第一代的缺点,如下所示:版本,开发了具有逐次逼近寄存器(SAR)ADC的EIT前端。读出链包括一个可编程增益仪表放大器(IA),一个模数转换器(ADC)驱动器和一个混合电阻电容(R-C)SAR ADC。读出通道采用0.18微米CMOS技术制造。这是第一个用于EIT的ASIC前端,涵盖从100 Hz到10 MHz的各种频率。该链根据其工作频率将SNR保持在68至56 dB之间,消耗的功率在6.9 mW至21.8 mW之间。在此设计中,输入频率高于3.5 kHz时,链的功耗是固定的,等于21.8 mW。为了进一步改善链的性能并降低功耗,双链的全功率自适应链DAC混合RC SAR ADC采用0.18微米CMOS技术实现,构成了第二个版本。该链覆盖的频率范围从100 Hz到10 MHz。读出链的总测量功耗为2.1 mW至21.7 mW,同时SNR保持在81至65 dB之间。该设计中的链条功耗几乎随着输入频率的增加而线性增加,与上一代产品相比,功耗大大降低。

著录项

  • 作者

    Takhti, Mohammad.;

  • 作者单位

    Dartmouth College.;

  • 授予单位 Dartmouth College.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2018
  • 页码 151 p.
  • 总页数 151
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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