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SPECIFIC HEAT AND NONEQUILIBRIUM ASPECTS OF VAPOR DEPOSITION GROWTH OF A15 SUPERCONDUCTORS (NIOBIUM-TIN).

机译:A15超导体(铌锡)的气相沉积生长的比热和非平衡方面。

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摘要

Thin films of high transition temperature superconductors of the A15 crystal structure have been prepared by electron beam coevaporation. The specific heat of these films has been measured between 1.5 and 30 K. The transition to the superconducting state was not uniformly sharp as would be expected from these presumably metallurgically stable materials. Instead, it was found to range in width from a low of .3 K for stoichiometric Niobium-Tin to a high of 6 K for Niobium-Tin prepared off-stoichiometry.; The systematics of this broad transition were probed by varying the deposition parameters, such as composition, substrate temperature, deposition rate, and background gases, by examining different A15's, by changing the means of deposition from evaporation to sputtering, and by annealing. The width of the transition is found to be dependent on both deposition temperature and on the microstructure of the film.; The systematics of the transition width strongly suggest that its source is a compositional inhomogeneity which develops at the film surface during the growth. The dependence on temperature indicates that the inhomogeneity is not a bulk, equilibrium effect. The dependence on microstructure suggests that the inhomogeneity is caused by a grain-orientation dependent surface effect. In particular, a model for a new type of surface segregation applicable in a growing film where the surface mobility is orders of magnitude greater than the bulk mobility is proposed to explain the results. This model, if correct, is believed to have general application to vapor phase film growth.
机译:通过电子束共蒸发制备了具有A15晶体结构的高转变温度超导体的薄膜。这些膜的比热已测量为1.5至30K。向超导状态的转变并不像从这些可能是冶金稳定的材料所预期的那样均匀尖锐。取而代之的是,发现其宽度范围从化学计量的铌-锡的低.3 K到制备的非化学计量的铌-锡的高6K。通过改变沉积参数(例如成分,衬底温度,沉积速率和背景气体),检查不同的A15,通过从蒸发到溅射的沉积方式以及退火方法,探索了这种广泛转变的系统。发现过渡的宽度取决于沉积温度和膜的微观结构。过渡宽度的系统性强烈表明其来源是在生长过程中在膜表面形成的成分不均匀性。对温度的依赖性表明不均匀性不是整体的平衡效应。对微观结构的依赖性表明,不均匀性是由晶粒取向相关的表面效应引起的。尤其是,提出了一种适用于生长膜的新型表面偏析模型,其中表面迁移率比本体迁移率大几个数量级。如果正确,则认为该模型可普遍应用于气相膜生长。

著录项

  • 作者

    HELLMAN, FRANCES.;

  • 作者单位

    Stanford University.;

  • 授予单位 Stanford University.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1985
  • 页码 400 p.
  • 总页数 400
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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