Indium phosphide-based high performance quantum well avalanche photodiodes and integrated photoreceivers.

摘要

arge bandwidth optical communication systems are becoming more important than ever for transferring information efficiently. The availability of high performance photodetectors and front-end photoreceivers that operate in the low-loss 1.55 ;High-speed and high gain-bandwidth product SAM(MQW)-APDs with a strained In;Integrated PIN-FET photoreceivers with transimpedance and transimpedance/voltage amplifiers based on regrown 0.1 ;Integrated PIN-HBT transimpedance photoreceivers using the base, collector and subcollector HBT layers as the p-i-n photodiode were fabricated and characterized. Discrete HBTs demonstrated 54 GHz and 51 GHz for