Plasma etch reactor simulation for improved optimization and control.

摘要

An efficient strategy for dynamic simulation of a plasma etcher is developed. It is based on a moving-boundary sequential steady-state simulation procedure. The two-dimensional finite difference simulator developed predicts the fluid-flow, plasma species and etch rate distribution in the isothermal reactor, for the CF;Validation of the model for wide ranging operating conditions were conducted using predicted and experimental profiles. Parametric studies were conducted with various wafer etch rate profiles and surface reactivities (to account for impurity and temperature distributions). The rate of surface clearing and rate of change in fluorine concentration predicted by the model can be used for reactor design, and to predict stop-etch time.