Direct simulation Monte Carlo analysis of flows and etch rate in an inductively coupled plasma reactor

摘要

The direct simulation Monte Carlo (DSMC) method was employed to predict the etch rate distribution on Si wafer. The etchant is assumed to be Cl. The production rate of Cl due to electron impact was obtained separately by preprocessing an inductively coupled chlorine plasma by use of the particle-in-cell/Monte Carlo method. Under the condition of constant total pressure, the etch rate increases with the mass flow rate of source gas Cl/sub 2/. The density of the etch product SiCl/sub 2/ rapidly decreases with increasing the flow rate. The density of the etchant hardly depends on the flow rate. The recombination 2Cl/spl rarr/Cl/sub 2/ on the inner walls of etching apparatus has a large effect on the etch rate; recombination probability of 0.1 results in 50% reduction of the etch rate. The etch rate distribution becomes more uniform when the reaction probability at the wafer surface is reduced.