METHODS TO ELIMINATE M-SHAPE ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR

摘要

An inductively-coupled plasma processing chamber (102) has a chamber with a ceiling (106). A first (148) and second (150) antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply (132) is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.