Silicon Carbide (SiC) device technology is rapidly growing, driven by high-temperature, high-voltage, high-frequency, and microwave applications. This research focuses on the development of device technology for 3C-SiC lateral devices for high-voltage power applications. Specific contributions of this work include the development of new process technologies, optimization of technologies already existing for Si to better match the SiC material and electrical properties, and incorporation of these process technologies into the fabrication of lateral power devices on SiC.;Several lateral devices have been designed, fabricated and electrically characterized. These include Schottky diodes, pn junctions, and lateral MOSFETs. A theoretical analysis of various figures of merit is performed for new semiconductor materials to determine the optimum semiconductors for high-voltage unipolar power devices. The LOcal Oxidation of Silicon (LOCOS) isolation scheme is extended for use in SiC integrated circuits. A new, improved isolation technology, called the Field Poly process, has also been developed.;Specific contact resistivity for metal-semiconductor contacts is modeled for its dependence on surface doping concentration, metal barrier height, and temperature. Ohmic contacts to both n;Lateral, planar ion-implanted p
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