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Self-diffusion, electrical properties and defect structure of undoped, single-crystal zinc oxide.

机译:未掺杂的单晶氧化锌的自扩散,电性能和缺陷结构。

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摘要

Oxygen and zinc tracer self-diffusion coefficients were measured using Secondary Ion Mass Spectrometry (SIMS). For oxygen diffusion, {dollar}sp{lcub}18{rcub}{dollar}O{dollar}sb2{dollar} was used as the tracer, and diffusion was measured from 850-1200{dollar}spcirc{dollar}C as a function of crystallographic orientation at {dollar}rm psb{lcub}Osb2{rcub}{dollar} = 1.0 atm. Diffusivities measured in this manner were isotropic, and the activation energy was 3.6-4.1 eV, indicative of an oxygen vacancy mechanism.; Zinc diffusion was measured using {dollar}sp{lcub}70{rcub}{dollar}Zn as the tracer as a function of {dollar}rm psb{lcub}Osb2{rcub}{dollar}, orientation, and temperature from 850-1020{dollar}spcirc{dollar}C. Diffusivities measured were isotropic with an activation energy of 3.9 eV, suggesting that zinc diffusion occurs via a vacancy mechanism.; The evaporation of ZnO was considered in its effect on the measurement of diffusion. For oxygen diffusion, evaporation was controlled by placing samples inside ZnO crucibles. For zinc diffusion, evaporation was controlled by placing sintered ZnO pellets adjacent to the samples during diffusion anneals. The effects of evaporation are discussed.; Electrical conductivity and thermopower were measured in the c-direction as a function of temperature and {dollar}rm psb{lcub}Osb2{rcub}{dollar}. Measurements are consistent with n-type conductivity. The behavior of the electrical properties as a function of oxygen pressure indicate the presence of an extrinsic donor impurity at intermediate-{dollar}rm psb{lcub}Osb2{rcub}{dollar}, and an intrinsic defect equilibrium at low-{dollar}rm psb{lcub}Osb2{rcub}{dollar}.; A defect chemistry analysis of the diffusion and electrical data suggests that impurities dominate the conductivity at intermediate oxygen pressure while the intrinsic equilibrium between electrons and oxygen vacancies dominates at reduced {dollar}rm psb{lcub}Osb2{rcub}{dollar}.
机译:氧和锌示踪剂的自扩散系数使用二次离子质谱(SIMS)进行测量。对于氧扩散,使用了{dol} sp {lcub} 18 {rcub} {dol}} sb2 {dollar}作为示踪剂,并在850-1200 {sp} {dol} C中测量了扩散{rm} psb {lcub} Osb2 {rcub} {dol} = 1.0 atm的晶体取向函数。以这种方式测量的扩散率是各向同性的,活化能为3.6-4.1eV,表明氧空位机理。使用{dol} sp {lcub} 70 {rcub} {dollar} Zn作为示踪剂,根据rmrm psb {lcub} Osb2 {rcub} {dollar},方向和温度从850- 1020 {dollar} spcirc {dollar} C。测得的扩散率是各向同性的,活化能为3.9 eV,表明锌的扩散是通过空位机理发生的。考虑到ZnO的蒸发对扩散测量的影响。对于氧扩散,通过将样品置于ZnO坩埚内来控制蒸发。对于锌的扩散,在扩散退火过程中,通过将烧结的ZnO球粒置于样品附近来控制蒸发。讨论了蒸发的影响。在c方向上测量电导率和热功率随温度和{rmrm psb {lcub} Osb2 {rcub} {dollar}的变化。测量结果与n型电导率一致。电性能作为氧气压力的函数表明,在中间{rm} psb {lcub} Osb2 {rcub} {dol}处存在外在施主杂质,在低{dollar}处存在固有的缺陷平衡rm psb {lcub} Osb2 {rcub} {dollar}。对扩散和电学数据的缺陷化学分析表明,在中等氧气压力下,杂质占主导地位,而在电子和氧空位之间的固有平衡在降低时,则占主导地位。rmrm psb {lcub} Osb2 {rcub} {dollar}。

著录项

  • 作者

    Tomlins, Gregory Wayne.;

  • 作者单位

    Northwestern University.;

  • 授予单位 Northwestern University.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1996
  • 页码 213 p.
  • 总页数 213
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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