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Antimony-based materials for infrared photodetectors: Growth, characterization, fabrication, and analysis.

机译:用于红外光电探测器的基于锑的材料:生长,表征,制造和分析。

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摘要

Sb-based materials are investigated for infrared photodetectors capable of performance comparable or better than that of industry standard material systems such as mercury cadmium telluride (MCT) or Si microbolometers. The materials were grown by solid source molecular beam epitaxy on high quality, less expensive, large area substrate material such as GaAs and Si.; InSb was grown on 3&inches; GaAs substrates with material quality approaching that of bulk material as assessed using structural, electrical, and optical measurements. X-ray diffraction full widths at half maximum (FWHM) of ∼50 arcsec, electron mobilities of 125,000 cm2/V-s at 200K, and PL linewidths of ∼18 meV were obtained for InSb epilayers on GaAs.; In collaboration with an industrial partner, infrared imaging was obtained for the first time from heteroepitaxial InSb. A 256 x 256 array was bump bonded to a Si CMOS readout circuit resulting in infrared thermal imaging.; By incorporating As into the InSb lattice, the cutoff wavelength can be extended out to ∼12 μm at 300K. There is interest in infrared detectors that can operate in the long wavelength range without the need for cryogenic or thermoelectric cooling. Eliminating the cooling system improves reliability, decreases cost, and simplifies the overall system design. The main competitors to InAsSb are MCT and Si microbolometers. Although Si microbolometers achieve adequate detectivities at room temperature, the speed of the detector is not fast enough for applications such as projectile fuzes.; MCT is capable of high speed operation with detectivities in the 10 8 cm-Hz1/2/W range at 300K. However MCT suffers from material problems such as instability during growth and fabrication due to the ionic bonding of this II–VI material, as well as the very sharp dependence of cutoff wavelength on composition in the long wavelength infrared range. For these reasons, InAsSb has been investigated for uncooled infrared detector applications. Infrared detectors grown on GaAs substrates with InSb and AlInSb buffer layers have exhibited detectivities of 1–4 × 108 cm-Hz1/2/W at 300K. These detectivities are comparable to that obtained in state-of-the-art commercially available MCT detectors, which shows the great promise of the InAsSb material system for uncooled infrared detectors.
机译:研究了基于锑的材料的红外光电探测器,其性能可与行业标准材料系统(例如碲化汞镉(MCT)或硅微辐射热计)相媲美或更好。这些材料是通过固体源分子束外延在高质量,便宜的大面积衬底材料(例如GaAs和Si)上生长的; InSb生长在3英寸上;使用结构,电气和光学测量评估得出的材料质量接近块状材料的GaAs衬底。对于GaAs上的InSb外延层,X射线衍射的半峰全宽(FWHM)约为50 arcsec,电子迁移率在200K下为125,000 cm 2 / Vs,PL线宽为〜18 meV。 ;与工业伙伴合作,首次从异质外延InSb中获得了红外成像。 256×256阵列凸点结合到Si CMOS读出电路,产生红外热成像。通过将As掺入InSb晶格中,可以在300K处将截止波长扩展到〜12μm。可以在长波长范围内运行而无需低温或热电冷却的红外检测器引起了人们的兴趣。消除冷却系统可提高可靠性,降低成本并简化整体系统设计。 InAsSb的主要竞争对手是MCT和Si微辐射热计。尽管硅微辐射热计在室温下具有足够的探测能力,但对于射弹引信等应用,探测器的速度还不够快。 MCT能够在300K下以10 8 cm-Hz 1/2 / W范围内的检测率进行高速操作。但是,MCT会遇到一些材料问题,例如由于这种II-VI材料的离子键合而导致的生长和制造过程中的不稳定性,以及在长波长红外范围内截止波长对成分的非常强烈的依赖性​​。由于这些原因,已经对InAsSb进行了非制冷红外探测器应用的研究。在具有InSb和AlInSb缓冲层的GaAs衬底上生长的红外探测器在300K时的探测灵敏度为1-4×10 8 cm-Hz 1/2 / W。这些检测率可与最新的市场上可买到的MCT检测器相媲美,这表明InAsSb材料系统可用于非冷却红外检测器。

著录项

  • 作者

    Michel, Erick John.;

  • 作者单位

    Northwestern University.;

  • 授予单位 Northwestern University.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1998
  • 页码 248 p.
  • 总页数 248
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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