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Nucleation promotion and kinetics on chemical vapor-deposited thin films.

机译:化学气相沉积薄膜的成核促进和动力学。

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The growth of thin films by chemical vapor deposition (CVD) has drawn a great attention in the past two decades, and applications of this fabrication process are now key elements in modern technologies. The importance of CVD lies primarily in its versatility for depositing a wide variety of materials as well as excellent conformal coverage on intricately shaped objects. A thorough understanding of the chemistry involved in CVD is essential in order to fully exploit the advantages that it can provide. Nucleation promotion by altering the surface activity is thus investigated and some fascinating phenomena are identified. Additionally, kinetics studies are accomplished for the deposition of a novel material by analyzing the components in the gas phase.; Chapter 1 begins with history of the development of CVD processing and a comparison with other competitive deposition techniques in industry. The various types of CVD processes currently used in production technology are also summarized in this chapter.; Chapter 2 describes a simple optical system designed for determining the induction period of Al CVD by dimethylethylamine alane (DMEAA). Two substrate pretreatment methods for nucleation promotion are evaluated using this device. Films deposited by these methods are smoother and have faster growth rates.; A procedure for real-time monitoring of aluminum film growth using the reflected laser intensity is developed in Chapter 3 to explore the phenomena observed in Chapter 2. Two simulation models are proposed to interpret the changes of reflected laser intensity during deposition. They suggest that deposition on substrates with and without the pretreatment occurs through different film growth modes.; Chapter 4 presents the discovery of a new CVD thin film material and demonstrates the evaluation of its crystal structure, composition and fundamental properties. The concentration changes of precursor in the gas phase are monitored by a mass spectrometer. The reaction kinetics and mechanisms are investigated and correlated with experimental results as compared to theoretical expectation.
机译:在过去的二十年中,通过化学气相沉积(CVD)薄膜的生长备受关注,这种制造工艺的应用现已成为现代技术中的关键要素。 CVD的重要性主要在于其在沉积各种材料时的多功能性以及在复杂形状的物体上具有出色的保形性。为了充分利用其可提供的优势,必须对CVD中涉及的化学物质有透彻的了解。因此研究了通过改变表面活性来促进成核并发现了一些令人着迷的现象。另外,通过分析气相中的组分完成了动力学研究,以沉积新型材料。第1章从CVD处理的发展历史开始,并与工业上其他竞争性沉积技术进行比较。本章还概述了当前生产技术中使用的各种CVD工艺。第2章介绍了一种简单的光学系统,旨在确定二甲基乙胺铝烷(DMEAA)的Al CVD诱导时间。使用该装置评估了两种用于促进成核的基质预处理方法。用这些方法沉积的薄膜更光滑,生长速度更快。在第3章中开发了一种使用反射激光强度实时监视铝膜生长的程序,以探索在第2章中观察到的现象。提出了两种仿真模型来解释沉积过程中反射激光强度的变化。他们认为,在有和没有进行预处理的情况下,通过不同的薄膜生长方式在基板上进行沉积。第4章介绍了一种新的CVD薄膜材料的发现,并演示了其晶体结构,组成和基本性能的评估。气相中前体的浓度变化通过质谱仪监测。与理论预期相比,研究了反应动力学和机理,并将其与实验结果相关联。

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