首页> 外文期刊>Journal of Materials Research >Nucleation mechanisms in chemically vapor-deposited mullite coatings on SiC
【24h】

Nucleation mechanisms in chemically vapor-deposited mullite coatings on SiC

机译:SiC化学气相沉积莫来石涂层的成核机理

获取原文
获取原文并翻译 | 示例
       

摘要

Dense, uniform, and adherent chemically vapor-deposited mullite coatings were deposited on SiC substrates using the AlCl,-SiCl_4-H_2-CO_2 system. Typical coating morphology consisted of a thin interfacial layer of γ-Al_2O_3, nanocrystallites embedded within a vitreous SiO_2-based matrix. When a critical Al/Si ratio of 3.2 ± 0.29 was reached within this nanocrystalline layer, mullite crystals nucleated and grew as columnar grains. The thickness of the nanocrystalline layer decreased as the input AlCl,/SiCl_4 ratio was increased. In all cases, the Al/Si composition in the coating increased from the coating/substrate interface to the coating surface. Critical factors leading to the nucleation and growth of mullite crystals are discussed in this article.
机译:使用AlCl,-SiCl_4-H_2-CO_2系统在SiC衬底上沉积致密,均匀且粘附的化学气相沉积莫来石涂层。典型的涂层形态由γ-Al_2O_3的薄界面层,嵌入在基于SiO_2的玻璃基体中的纳米微晶组成。当在该纳米晶层内达到临界的Al / Si比为3.2±0.29时,莫来石晶体成核并生长为柱状晶粒。纳米晶体层的厚度随着输入的AlCl,/ SiCl_4比率的增加而减小。在所有情况下,涂层中的Al / Si组成都从涂层/基材界面到涂层表面增加。本文讨论了导致莫来石晶体成核和生长的关键因素。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号