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Thermomechanical modelling for phonon transport and damping analysis of silicon nano-structure.

机译:声子传输和硅纳米结构阻尼分析的热力学建模。

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摘要

With the technology advancement in fabrication and processing over the past decades, the miniaturization of structures down to nano-scale has been successfully applied in many fields such as high strength automotive parts, ultra-high frequency electromechanical resonators, ultra-light sensors, high efficiency energy harvesting devices and etc. For these applications, the concept of energy efficiency is of particular significance to designing high performance and stability nanoscale electromechanical and thermomechanical systems. Similar to traditional engineering fields, effective computational tools can be extremely useful to investigate the properties and behavior, and to expedite the design process of nano-sized materials and structures. However, the development of these computational tools relies on physical models that accurately describe the fundamental physics of nano-scale systems, for which many classical continuum models of mechanics, transport and thermodynamics are no longer valid. Due to the lack of effective computational tools for nano-scale systems, atom based simulation tools are often adopted. However, atomistic simulations are computationally costly and become infeasible for systems larger than a few tens of nanometers. To tackle these challenges, in this research, we aim to develop thermomechanical models based on phonon theories and study the thermal transport and damping behavior of silicon nano-structures.;In the first part of this research, a computational approach is developed for the calculation of thermoelectric properties of nanoporous silicon. The approach employs a phonon Boltzmann transport equation (BTE) for phonon thermal transport analysis and a non-equilibrium Green's function (NEGF) for electronic transport analysis. The effects of doping density, porosity, temperature and nanopore size on thermoelectric properties of nanoporous silicon are investigated. It is confirmed that nanoporous silicon has significantly higher thermoelectric energy conversion efficiency than its nonporous counterpart. Specifically, this study shows that, with a n-type doping density of 1020 cm-3, a porosity of 36% and nanopore size of 3 nm x 3 nm, the thermoelectric figure of merit of nanoporous silicon can reach 0.32 at 600 K. The results also show that the degradation of electrical conductivity of nanoporous silicon due to the inclusion of nanopores is compensated by the large reduction in the phonon thermal conductivity and increase of absolute value of the Seebeck coefficient, resulting in a significantly improved figure of merit.;In the second part of this research, we study phonon-mediated intrinsic damping in single crystal silicon nano-resonators. In such nano-resonators, phonons are modulated by mechanical strain in both spatial and frequency domains when the strain field varies at ultra-high frequency level and phonon thermal transport is of partial ballistic and partial diffusive nature. The phonon modulation theory explains that the spatial inhomogeneity in the strain field induced by vibration results in internal phonon transport and relaxation, leading to thermoelastic energy dissipation. It also describes the intra-mode phonon scattering due to modulation of phonon frequency by the strain field, hence the Akhiezer dissipation. To account for both, a quasi-continuum thermomechanical (QCTM) model is developed. In the proposed model, the frequency-dependent phonon BTE is adopted and coupled with elasticity via phonon modulation theory. The mathematical model is implemented numerically by using the finite element method (FEM) and finite volume method (FVM). The quality factor of silicon nano-resonators under forced vibration is obtained from the numerical solution of the quasi-continuum model. The quasi-continuum model is validated by comparing the numerical results with those from molecular dynamics (MD) simulations.;In the third part of thesis, the intrinsic damping of silicon resonators is further investigated with focus on the dominant damping mechanisms and applicability of different thermomechanical models at different length scales. At micro-scale, thermoelastic damping is the primary intrinsic damping source and can be effectively described by the continuum thermoelasticity (TE) model which captures strain-induced thermal energy perturbation and re-equilibration through heat transfer along the temperature gradient. At nano-scale, however, the intrinsic damping is caused simultaneously by multiple energy dissipation mechanisms, namely the Akhiezer, thermoelastic and surface damping mechanisms. Acknowledging these, the quasi-continuum thermomechanical model proposed in the second part is adopted to study damping behavior of nano-resonators. Although the QCTM model reduces theoretically and computationally to the continuum TE model when the resonator size increases from nanometers to micrometers, the size limit of the QCTM model is a few hundred nanometers due to its high computational cost. At submicron-scale, transition of the dominant damping mechanisms takes place. The Akhiezer and surface scattering effects diminish in strength when the vibrational frequency reduces and surface-to-volume ratio decreases. For such cases, a gray QCTM model that treats phonon dispersion, transport and relaxation holistically is developed to account for these damping characteristics and at meantime reduce computational cost. The three thermomechanical models are used to perform a scaling analysis and the damping ratio of resonators at various length scales is calculated and compared. The results show that while the QCTM accurately captures the physical behavior, it becomes very time consuming when the resonator length is beyond 100 nm. However, the gray QCTM model, although much more efficient, is shown to be inadequate in the size range of 100 nm to 1 micron, suggesting the details of phonon dispersion and scattering should still be accounted for in this size range. When the size is larger than 1 micron, the gray QCTM and classical TE models give consistent results, indicating that the gray QCTM reduces theoretically and computationally to the classical TE model at this length scale.
机译:随着过去几十年中制造和加工技术的进步,低至纳米级结构的微型化已成功应用于许多领域,例如高强度汽车部件,超高频机电谐振器,超光传感器,高效率对于这些应用,能源效率的概念对于设计高性能和稳定性的纳米级机电系统和热机械系统特别重要。与传统工程领域类似,有效的计算工具对于研究特性和行为以及加快纳米级材料和结构的设计过程非常有用。但是,这些计算工具的开发依赖于能够精确描述纳米级系统基本物理原理的物理模型,对于这些物理模型,力学,传输和热力学的许多经典连续模型都不再有效。由于缺乏用于纳米级系统的有效计算工具,因此经常采用基于原子的仿真工具。但是,原子模拟的计算量很大,并且对于大于几十纳米的系统来说是不可行的。为了解决这些挑战,在本研究中,我们旨在基于声子理论开发热力学模型,并研究硅纳米结构的热传递和阻尼行为。在本研究的第一部分,开发了一种用于计算的计算方法。纳米多孔硅的热电性能。该方法采用声子玻尔兹曼输运方程(BTE)进行声子热输运分析,并采用非平衡格林函数(NEGF)进行电子输运分析。研究了掺杂密度,孔隙率,温度和纳米孔尺寸对纳米多孔硅热电性能的影响。已经证实,纳米多孔硅具有比其无孔对应物高得多的热电能量转换效率。具体而言,这项研究表明,在1020 cm-3的n型掺杂密度,36%的孔隙率和3 nm x 3 nm的纳米孔尺寸下,纳米多孔硅的热电性能因数在600 K时可达到0.32。结果还表明,由于声子导热率的大幅度降低和塞贝克系数绝对值的增加,补偿了由于包含纳米孔而导致的纳米多孔硅电导率的降低,从而显着提高了品质因数。在本研究的第二部分中,我们研究了单晶硅纳米谐振器中声子介导的固有阻尼。在这样的纳米谐振器中,当应变场在超高频水平变化并且声子的热传递具有部分弹道和部分扩散性时,声子在空间和频域中都受到机械应变的调制。声子调制理论解释说,由振动引起的应变场中的空间不均匀性会导致内部声子的传输和弛豫,从而导致热弹性能量的耗散。它还描述了由于应变场对声子频率的调制而导致的模内声子散射,因此也说明了Akhiezer的耗散。考虑到这两者,开发了准连续热机械(QCTM)模型。在所提出的模型中,采用了频率依赖的声子BTE,并通过声子调制理论将其与弹性耦合。通过使用有限元方法(FEM)和有限体积方法(FVM)来以数字方式实现数学模型。从准连续模型的数值解获得了在强迫振动下硅纳米谐振器的品质因数。通过将数值结果与分子动力学(MD)仿真结果进行比较,验证了准连续谱模型。论文的第三部分,重点研究了硅谐振腔的固有阻尼,并研究了其主要的阻尼机理和适用性。不同长度尺度的热力学模型。在微观尺度上,热弹性阻尼是主要的固有阻尼源,可以通过连续热弹性模型(TE)来有效描述,该模型捕获应变引起的热能扰动,并通过沿温度梯度的热传递来重新平衡。然而,在纳米尺度上,固有阻尼是由多种能量耗散机制同时引起的,这些机制是Akhiezer,热弹性和表面阻尼机制。认识到这些,采用第二部分提出的准连续热力学模型来研究纳米谐振器的阻尼行为。尽管当谐振器尺寸从纳米增加到微米时,QCTM模型在理论上和计算上都减小为连续体TE模型由于其高昂的计算成本,QCTM模型的尺寸限制为几百纳米。在亚微米级,主要的阻尼机制发生了转变。当振动频率降低且表面体积比降低时,Akhiezer和表面散射效应的强度会降低。对于此类情况,开发了一种灰色QCTM模型来全面处理声子的色散,迁移和弛豫,以解决这些阻尼特性,同时降低计算成本。使用这三个热力学模型进行比例分析,并计算和比较了各种长度比例的谐振器的阻尼比。结果表明,尽管QCTM准确地捕获了物理行为,但当谐振器长度超过100 nm时,它变得非常耗时。但是,灰色QCTM模型虽然效率更高,但在100 nm至1微米的尺寸范围内显示不足,这表明在该尺寸范围内仍应考虑声子分散和散射的细节。当尺寸大于1微米时,灰色QCTM和经典TE模型会给出一致的结果,这表明灰色QCTM在此长度尺度上在理论上和计算上均会减少到经典TE模型。

著录项

  • 作者

    Yu, Ying.;

  • 作者单位

    Clemson University.;

  • 授予单位 Clemson University.;
  • 学科 Mechanical engineering.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 140 p.
  • 总页数 140
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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